Investigation of ion-implanted GaP layers by Brillouin scattering
- 15 May 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (10) , 4951-4954
- https://doi.org/10.1063/1.353814
Abstract
Surface‐acoustic‐wave propagation in 200‐keV N+‐ and 100‐keV Ar+‐implanted GaP have been studied by means of high‐resolution Brillouinspectroscopy. The acoustic‐wave velocity variations with dose showed marked softening (−13% for Ar+implantation) associated with progressive disorder, towards amorphization, of the implanted layers. For Ar+implantation a dose of 3×1014 cm−2 corresponded to the onset of disorder saturation and amorphization of GaP, while for N+implantation, even at 1×1016 ions cm−2, the amorphous phase was not reached. Annealing studies indicated a partial recovery of the crystal lattice, the most successful being for nonamorphized samples.This publication has 13 references indexed in Scilit:
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