Defect production in ion implanted GaAs, GaP and InP
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 789-793
- https://doi.org/10.1016/0168-583x(91)96281-o
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Influence of the dose rate on the damage production in ion implanted GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Defect production during ion implantation of various AIIIBV semiconductorsJournal of Applied Physics, 1989
- Application of optical transmission spectroscopy to the investigation of defects in ion implanted GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Near-Edge Optical Absorption Behaviour in Weakly Damaged Ion-Implanted GaAsPhysica Status Solidi (a), 1986
- Annealing studies of ion-implanted gaas in the 40–300 K rangeRadiation Effects, 1982
- Ion implantation and low-temperature epitaxial regrowth of GaAsJournal of Applied Physics, 1981
- Calculation of optical reflection and transmission coefficients of a multi-layer systemPhysica Status Solidi (a), 1980
- Ion-beam-induced annealing effects in GaAsNuclear Instruments and Methods, 1980
- The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductorsNuclear Instruments and Methods, 1980
- Lattice disorder produced in GaAs by 60 keV Cd ions and 70 keV Zn ionsRadiation Effects, 1970