Electron mobility and thermoelectric power in pure mercury telluride
- 28 May 1976
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 9 (10) , 1945-1954
- https://doi.org/10.1088/0022-3719/9/10/013
Abstract
The temperature dependences of the mobility and thermoelectric power are calculated for pure mercury telluride. The scattering of electrons by charged point centres and optical phonons is taken into account. The variational principle is used in the calculation because the relaxation time cannot be introduced for optical-phonon scattering. It is shown that the conduction-valence interband processes in optical-phonon scattering, possible in this zero-gap semiconductor, give an important contribution to the total scattering. It is demonstrated that the electron mobility in pure HgTe is determined by charged-point-centre and optical-phonon scattering and that the experimentally observed minimum of the conductivity between 30K and 50K can be explained by the interband resonant contribution to optical scattering.Keywords
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