Cross-sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus-doped polycrystalline silicon gate
- 15 April 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (8) , 2773-2776
- https://doi.org/10.1063/1.336986
Abstract
Titanium interaction with phosphorus-doped polycrystalline silicon gate electrodes was investigated by cross-sectional transmission electron microscopy and correlated with sheet resistance measurements. Phosphorus concentration above 1×1016 ion/cm2 in the polycrystalline silicon leads to decreased TiSi2 formation, discontinuous metal silicide layer, and increased sheet resistance. A possible cause could be the formation of titanium phosphide at high phosphorus concentration in the polycrystalline silicon, competing with the total titanium available for silicide formation.This publication has 6 references indexed in Scilit:
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