Characterization of Cu(InGa)Se/sub 2/ solar cells with high Ga content

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Abstract
Cu(InGa)Se/sub 2/ thin films were deposited by elemental evaporation with x/spl equiv/[Ga]/([In]+[Ga]) from 0.27 to 0.81 and bandgap (E/sub g/) from 1.16 to 1.54 eV. The Cu(InGa)Se/sub 2/ films were deposited with no gradients in the Ga and In and have no change in the structure or morphology as the Ga content increased. Glass/Mo/Cu(InGa)Se/sub 2//CdS/ZnO solar cells have /spl sim/15% efficiency with x<0.5 or E/sub g/<1.3 eV. V/sub oc/ increases over the entire bandgap range up to 820 mV but the cell efficiency falls off as E/sub g/ increases above 1.3 eV. Analysis of current-voltage and quantum efficiency measurements as a function of voltage show that this is attributable primarily to a voltage dependent current collection which results in a fall-off of fill factor, J/sub sc/ and, to a lesser extent, V/sub oc/. Finally, Cu(InGa)Se/sub 2/ films with a Ga gradient are shown to improve fill factor in the high bandgap solar cells, apparently by improving the current collection.