Auger Electron Spectroscopy of Cu2S–CdS Heterojunction Interface
- 1 June 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (6) , L296
- https://doi.org/10.1143/jjap.19.l296
Abstract
The depth distribution profiles of elements near the interface of Cu2S–CdS heterojunction formed on the polar (0001) and (0001̄) surfaces of CdS were investigated by Auger electron spectroscopy. The diffusion of Cu into CdS was found to be easier on the CdS (0001̄) surface than on the (0001) surface. Further, the variation of the chemical shift in the dN(E)/dE Auger signal of S (LMM) is shown to occur between Cu2S and CdS.Keywords
This publication has 12 references indexed in Scilit:
- Auger Electron Spectroscopy of the Polar (0001) and (000\bar1) Surfaces of CbS Single CrystalJapanese Journal of Applied Physics, 1979
- Barrier Model of Cu2S–CdS Heterojunction Diodes Estimated from Open-Circuit Photovoltage Spectrum and CathodoluminescenceJapanese Journal of Applied Physics, 1979
- AES study of the low temperature growth of Cu2−xS on CdSJournal of Crystal Growth, 1978
- Photoelectrical Characteristics of Cu2S–CdS Heterojunction DiodesJapanese Journal of Applied Physics, 1977
- Observation of extrinsic surface states on (1120) CdSSurface Science, 1975
- LEED analysis of the polar (0001)−Cd and (0001̄)−S surfaces of cadmium sulfideJournal of Vacuum Science and Technology, 1975
- Surface photovoltage and Auger spectroscopy studies of (112̄0) CdS surfaceJournal of Vacuum Science and Technology, 1975
- LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUMApplied Physics Letters, 1971
- Crystallographic Polarity in the II-VI CompoundsJournal of Applied Physics, 1962
- Photovoltaic Effect in Cadmium SulfidePhysical Review B, 1954