Uniaxial stress measurements on the 1039.8 meV zero-phonon line in irradiated silicon.
- 29 February 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 49 (5) , 427-431
- https://doi.org/10.1016/0038-1098(84)90656-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Correlation of photoluminescence and symmetry studies with photoexcitation and decay processes of infrared active defects in SiJournal of Applied Physics, 1983
- Recombination luminescence from ion implanted siliconRadiation Effects, 1976
- New epr spectra in neutron-irradiated silicon (II)Radiation Effects, 1974
- Study of the Homology between Silicon and Germanium by Thermal-Neutron SpectrometryPhysical Review B, 1972
- Dynamical Jahn-Teller Effect in Paramagnetic Resonance Spectra: Orbital Reduction Factors and Partial Quenching of Spin-Orbit InteractionPhysical Review B, 1965