Thermal Stability of W2N Film as a Diffusion Barrier between Al and Si
- 1 March 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (3R)
- https://doi.org/10.1143/jjap.33.1528
Abstract
Thermal stability of the contact system of Al/W2N/Si is studied by characterization techniques of cross-sectional transmission electron microscopy, X-ray diffraction and Auger electron spectroscopy. It is revealed that the effective suppression of grain growth of W2N barrier is important to the total stability of this system.Keywords
This publication has 4 references indexed in Scilit:
- Characterizations and Barrier Properties of WNx Film in the Al12W/WNx/Si Contact SystemJapanese Journal of Applied Physics, 1992
- WxN1−x alloys as diffusion barriers between Al and SiJournal of Applied Physics, 1988
- The influence of an aluminum overlayer on the interaction of tungsten films with silicon substratesJournal of Vacuum Science & Technology B, 1988
- Sputtered W–N diffusion barriersJournal of Vacuum Science & Technology A, 1985