In situ ellipsometric study of the influence of powder formation on the initial growth of glow discharge a−Si:H
- 1 October 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 233 (1-2) , 297-300
- https://doi.org/10.1016/0040-6090(93)90112-3
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Direct visual observation of powder dynamics in rf plasma-assisted depositionApplied Physics Letters, 1991
- Ellipsometric study of a-Si:H thin films deposited by square wave modulated rf glow dischargeJournal of Applied Physics, 1991
- The influence of the film-substrate interface on the defect density and other properties of sputter-deposited amorphous hydrogenated siliconIEEE Transactions on Electron Devices, 1989
- The influence of unsteady state plasma on the properties of a-Si:H films formed by glow discharge-chemical vapour depositionThin Solid Films, 1989
- Study of surface/interface and bulk defect density in a-Si:H by means of photothermal deflection spectroscopy and photoconductivityJournal of Non-Crystalline Solids, 1987
- The nucleation and growth of glow-discharge hydrogenated amorphous siliconJournal of Applied Physics, 1986
- Initial transient phenomena in the plasma decomposition of silaneJournal of Non-Crystalline Solids, 1985
- Initial stage of growth of the GD a-Si:HJournal of Non-Crystalline Solids, 1983
- Optical absorption spectra of surface or interface states in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Fast polarization modulated ellipsometer using a microprocessor system for digital Fourier analysisReview of Scientific Instruments, 1982