A comparison of bipolar technologies for linear handset power amplifier applications

1 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 10889299,p. 3-6
https://doi.org/10.1109/bipol.2003.1274924

Abstract

This work evaluates four bipolar technologies that are currently competing to become, or remain as, the preferred bipolar technology for the commercial development of linear handset power amplifier modules. The four technologies are: GaAs HBT, Si BJT, SiGe HBT, and InP HBT. The purpose of this work is to evaluate each of these competing technologies in terms of linear handset PA requirements (i.e. P/sub OUT/, ACPR, PAE, P/sub GAIN/, and ruggedness).

Keywords

This publication has 2 references indexed in Scilit:

InP HBT technology and applications
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
A monolithic Si PCS-CDMA power amplifier with 30% PAE at 1.9 GHz using a novel biasing scheme
IEEE Transactions on Microwave Theory and Techniques, 2001