Hydrogenation of GaAs MISFETs with Al 2 O 3 as the gate insulator
- 29 August 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (18) , 1724-1726
- https://doi.org/10.1049/el:19961158
Abstract
A GaAs MISFET with Al2O3 formed by the wet oxidation of AlAs as the gate oxide is reported. It is observed that hydrogenation treatment proves to be effective in reducing the state density at the Al2O3/GaAs interface due to removal of excess arsenic, which is a possible cause of interface states in this system.Keywords
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