Thin film Nb3Ge dc-SQUID with high operating temperature
- 1 May 1984
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (9) , 3441-3443
- https://doi.org/10.1063/1.333361
Abstract
Small area planar Nb3Ge dc‐SQUIDs with wide operating temperature range were obtained using thin (40 nm) Nb3Ge films with high transition temperature Tc and small critical current per unit length. The SQUIDS were fabricated using electron beam lithography and reactive ion etching. SQUID operation was observed in the temperature range from 10 to 18.4 K with a best modulation depth of 11%.This publication has 7 references indexed in Scilit:
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