Optically induced photomemory by 1 to 1.35 eV photons in the near-intrinsic spectral region on semiinsulating bulk GaAs
- 16 February 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 87 (2) , 623-628
- https://doi.org/10.1002/pssa.2210870226
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Optical Photogenerated Traps in Semi-Insulating GaAs Bulk MaterialPhysica Scripta, 1984
- Thermal quenching of the 1–1.35 eV extrinsic photoconductivity in semi-insulating GaAs (Cr, O)Solid State Communications, 1984
- Metastablecenter in InP: Defect-charge-state—controlled structural relaxationPhysical Review B, 1983
- Electronically controlled metastable defect reaction in InPPhysical Review B, 1983
- Photoelectric memory effect in GaAsJournal of Applied Physics, 1982
- Quenching effect of luminescence in bulk semi-insulating GaAsSolid State Communications, 1982
- Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donorsApplied Physics Letters, 1982
- Optical assessment of the main electron trap in bulk semi-insulating GaAsApplied Physics Letters, 1981
- Photocapacitance quenching effect for “oxygen” in GaAsSolid State Communications, 1978
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977