Doping Peculiarities of SiC Epitaxial Layers Grown by the Sublimation “Sandwich Method”
- 1 January 1992
- book chapter
- Published by Springer Nature in Springer Proceedings in Physics
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Epitaxial growth of silicon carbide layers by sublimation “Sandwich method” (II) structural defects and growth mechanismCrystal Research and Technology, 1981
- Epitaxial growth of silicon carbide layers by sublimation „sandwich method”︁ (I) growth kinetics in vacuumCrystal Research and Technology, 1979