Epitaxial growth of silicon carbide layers by sublimation “Sandwich method” (II) structural defects and growth mechanism
- 1 January 1981
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 16 (8) , 879-886
- https://doi.org/10.1002/crat.19810160804
Abstract
Structural defects of α‐SiC epitaxial layers grown by sublimation “sandwich‐method” in vacuum at the temperatures ranging from 1600 to 2100 °C have been investigated by X‐ray topography and optical microscopy methods. It was shown, that perfect SiC layers with the homogeneous polytype structure and small dislocation density (≦ 102 cm−2) may be obtained on the substrates with any crystallographic orientation at the conditions close to quasi‐equilibrium one. The presence of impurities and silicon deficiency in the vapour phase, lead usually to the deterioration of morphological and structural perfection of SiC layers. There are the following structural defects: uncoherent polytype inclusions (mainly β‐SiC), pores, dislocations, specific stacking faults. Morphological peculiarities of the SiC epitaxial layers and possible growth mechanisms are discussed.Keywords
This publication has 8 references indexed in Scilit:
- Effect of crystallographic orientation on the polytype stabilization and transformation of silicon carbidePhysica Status Solidi (a), 1979
- Epitaxial growth of silicon carbide layers by sublimation „sandwich method”︁ (I) growth kinetics in vacuumCrystal Research and Technology, 1979
- Liquid-phase epitaxial growth of 6H-SiC by the dipping technique for preparation of blue-light-emitting diodesJournal of Applied Physics, 1976
- Preparation of epitaxial silicon carbide layers doped with group III and group V elements on α-SiC crystalsJournal of Crystal Growth, 1976
- Epitaxial deposition of silicon carbide from silicon tetrachloride and hexaneThin Solid Films, 1976
- Initial stage and kinetics of epitaxial film growth of A3B5 compoundsCrystal Research and Technology, 1976
- Preparation of nitrogen-doped and phosphorus-doped epitaxial α-SiC layers on silicon carbide crystalsJournal of Crystal Growth, 1974
- Preparation and properties of vapour phase epitaxial silicon carbide diodesSolid-State Electronics, 1972