Effect of crystallographic orientation on the polytype stabilization and transformation of silicon carbide
- 16 January 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 51 (1) , 209-215
- https://doi.org/10.1002/pssa.2210510123
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Investigation of phase transformations and polytype stability of ß-SiCPhysica Status Solidi (a), 1977
- Silicon carbide doped with galliumPhysica Status Solidi (a), 1976
- Initial stage and kinetics of epitaxial film growth of A3B5 compoundsCrystal Research and Technology, 1976
- Influence of stacking faults on the growth of polytype structuresPhilosophical Magazine, 1975
- Microsyntaxy and polytypism in SiCMaterials Research Bulletin, 1974
- The structure, perfection and annealing behaviour of SiC needles grown by a VLS mechanismJournal of Crystal Growth, 1971
- Phase transformations, habit changes and crystal growth in SiCJournal of Crystal Growth, 1971
- Progress in the study of polytypism in crystals (I)Physica Status Solidi (a), 1971
- The discovery of a 2H-3C solid state transformation in silicon carbide single crystalsJournal of Crystal Growth, 1971
- Dangling Bonds in III–V CompoundsJournal of Applied Physics, 1961