Preparation of epitaxial silicon carbide layers doped with group III and group V elements on α-SiC crystals
- 31 March 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 32 (3) , 350-356
- https://doi.org/10.1016/0022-0248(76)90116-0
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Growth of silicon carbide crystals by vapour-liquid-solid (VLS) mechanism in the sublimation methodJournal of Crystal Growth, 1973
- Lanthanum-stimulated high-temperature whisker growth of α-SiCJournal of Crystal Growth, 1972
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- Identification of the (0001) and the (0001) Surfaces of Silicon CarbideJournal of the Electrochemical Society, 1969
- Epitaxial Growth of Silicon CarbideJournal of the Electrochemical Society, 1964