Preparation of pure and boron-doped epitaxial α-SiC layers on silicon carbide crystals
- 1 January 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 21 (1) , 125-134
- https://doi.org/10.1016/0022-0248(74)90160-2
Abstract
No abstract availableKeywords
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