Preparation of nitrogen-doped and phosphorus-doped epitaxial α-SiC layers on silicon carbide crystals
- 30 September 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 23 (3) , 185-189
- https://doi.org/10.1016/0022-0248(74)90232-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Preparation of pure and boron-doped epitaxial α-SiC layers on silicon carbide crystalsJournal of Crystal Growth, 1974
- Thermal etching of α-SiC crystals in argonJournal of Crystal Growth, 1972
- Epitaxial growth of SiC using Al as an acceleratorJournal of Crystal Growth, 1971
- Identification of the (0001) and the (0001) Surfaces of Silicon CarbideJournal of the Electrochemical Society, 1969
- Nitrogen Incorporation in SiCThe Journal of Chemical Physics, 1965