AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition
- 28 February 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 248, 548-551
- https://doi.org/10.1016/s0022-0248(02)01930-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wellsIEEE Journal of Selected Topics in Quantum Electronics, 2002
- AlGaN-GaN UV light-emitting diodes grown on SiC by metal-organic chemical vapor depositionIEEE Journal of Selected Topics in Quantum Electronics, 2002
- AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)Applied Physics Letters, 2002
- AlGaN/AlGaN double-heterojunction ultraviolet light-emittingdiodesgrown by metal organic chemical vapour depositionElectronics Letters, 2001
- Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaNApplied Physics Letters, 2001
- Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlatticeApplied Physics Letters, 2001
- Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layersApplied Physics Letters, 2000
- Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) SubstratesMRS Internet Journal of Nitride Semiconductor Research, 1996