AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of ${\text{4×10}}^{17}\hspace{0.17em}{\mathrm{cm}}^{\text{−3}},$ with a mobility of 8 cm²/Vs, is measured in ${\mathrm{Al}}_{\text{0.4}}{\mathrm{Ga}}_{\text{0.6}}\mathrm{N}/\mathrm{GaN}.$ We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm.