Novel semiconductor nanostructures by functional self-organized epitaxy
- 1 October 2001
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 11 (2-3) , 78-88
- https://doi.org/10.1016/s1386-9477(01)00180-1
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Exciton capture and losses in a stacked submicron array of sidewall quantum wires on patternedsubstratesPhysical Review B, 1999
- Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substratesApplied Physics Letters, 1999
- Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructuresJournal of Applied Physics, 1999
- Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs (311)A substratesJournal of Electronic Materials, 1999
- Device quality submicron arrays of stacked sidewall quantum wires on patterned GaAs (311)A substratesApplied Physics Letters, 1998
- Real-Space Transfer and Trapping of Carriers into Single GaAs Quantum Wires Studied by Near-Field Optical SpectroscopyPhysical Review Letters, 1997
- Patterned growth on GaAs (3 1 1)A substratesJournal of Crystal Growth, 1997
- Micro-Photoluminescence Study at Room Temperature of Sidewall Quantum Wires Formed on Patterned GaAs (311)A Substrates by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1996
- Selectivity of growth on patterned GaAs (311)A substratesApplied Physics Letters, 1996
- Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definitionApplied Physics Letters, 1977