Micro-Photoluminescence Study at Room Temperature of Sidewall Quantum Wires Formed on Patterned GaAs (311)A Substrates by Molecular Beam Epitaxy

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Abstract
Lateral quantum wires are grown by molecular beam epitaxy of GaAs/(AlGa)As multilayer structures on patterned GaAs (311)A substrates along the sidewall of 15–20 nm heigh mesa stripes oriented along [01–1]. The wire formation relies on the preferential migration of Ga atoms from the mesa top and bottom toward the sidewall. The quantum wires having a lateral width of ∼50 nm are characterized by micro-photoluminescence spectroscopy between 8 K and room temperature. In the whole temperature regime the quantum wire exhibits a clear luminescence peak, well separated from the quantum well peak at the mesa top and bottom forming the lateral barriers. Micro-photoluminescence linescans reveal the strong spatial confinement of the photogenerated carriers even at room temperature.