Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates

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Abstract
A p-i-n light-emitting diode (LED) with a single stack of sidewall quantum wires in the center of the intrinsic region has been fabricated by molecular-beam epitaxy on patterned GaAs (311)A substrates with all-Si n- and p-type doping. For small injection currents, the electroluminescence (EL) measured at low temperatures solely originates from the quantum wires without emission from the surrounding quantum wells within the patterned LED of 220 μm diameter. The selectivity of the EL emission is gradually reduced with increasing temperature, but the emission intensity per unit area in the wire regions is still two orders of magnitude larger than that in the well regions at room temperature. A model based on the lateral diffusion of injected electrons and holes is proposed to explain the selective carrier injection into the quantum wires.