High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
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- 1 June 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (6B) , L583
- https://doi.org/10.1143/jjap.40.l583
Abstract
No abstract availableKeywords
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