Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals

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Abstract
Using periodically grooved substrates, we propose a new approach to the growth of low-dislocation-density GaN single crystal. Three different substrates of basal-plane sapphire, 6H-SiC(0001)Si and Si(111) were used. Each substrate's surface geometry was formed as periodical straight trenches oriented in either the GaN or GaN direction. No selective-growth mask of dielectric or metallic materials was deposited on any part of the substrates during the growth. The laterally grown area had etch pit densities of 4×106 cm-2 or less.