Improvement of Crystalline Quality in GaN Films by Air-Bridged Lateral Epitaxial Growth
- 1 May 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (5B) , L453
- https://doi.org/10.1143/jjap.39.l453
Abstract
Air-bridged lateral epitaxial growth (ABLEG), a new technique of lateral growth of GaN films, has been developed using low-pressure metalorganic vapor phase epitaxy. A previously grown 1-µm-thick GaN film is grooved along the GaN direction, and the bottoms of the trenches and the sidewalls are covered with a silicon nitride mask. A free-standing GaN material is regrown from the exposed (0001) surface of the ridged GaN seed structure. Cross-sectional transmission electron microscopy analysis reveals that the dislocations originating from the underlying seed GaN extend straight in the direction and dislocations do not propagate into the wing region. The wing region also exhibits a smooth surface and the root mean square roughness is found to be 0.088 nm by atomic force microscopy measurement of the (0001) face of the wing region.Keywords
This publication has 14 references indexed in Scilit:
- High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layersApplied Physics Letters, 1999
- Pendeoepitaxy of gallium nitride thin filmsApplied Physics Letters, 1999
- Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse ModeJapanese Journal of Applied Physics, 1999
- Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-ContactJapanese Journal of Applied Physics, 1999
- Microstructure of GaN laterally overgrown by metalorganic chemical vapor depositionApplied Physics Letters, 1998
- InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN SubstratesJapanese Journal of Applied Physics, 1998
- InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrateApplied Physics Letters, 1998
- Dislocation density reduction via lateral epitaxy in selectively grown GaN structuresApplied Physics Letters, 1997
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1994