Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
- 1 February 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (2B) , L184
- https://doi.org/10.1143/jjap.38.l184
Abstract
Continuous-wave operation at room-temperature has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on low-dislocation-density n-GaN substrates with a backside n-contact. The current, current density and voltage at the lasing threshold were 144 mA, 10.9 kA/cm2 and 10.5 V, respectively, for a 3 µm wide ridge-geometry diode with high-reflection dielectric coated mirrors. Single-transverse-mode emission was observed in the far-field pattern of the LDs and the beam full width at half power in the parallel and perpendicular directions was 6° and 25°, respectively.Keywords
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