Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
- 20 April 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (16) , 2014-2016
- https://doi.org/10.1063/1.121250
Abstract
InGaN multi-quantum-well-structure laser diodes (LDs) grown on GaN substrates were demonstrated. The LDs showed a small thermal resistance of 30 °C/W and a lifetime longer than 780 h despite a large threshold current density of 7 kA/cm2. In contrast, the LDs grown on a sapphire substrate exhibited a high thermal resistance of 60 °C/W and a short lifetime of 200 h under room-temperature continuous-wave operation.Keywords
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