Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices
- 22 October 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (17) , 2737-2739
- https://doi.org/10.1063/1.1410340
Abstract
The transport properties of modulation, shifted modulation, and uniformly doped Al 0.20 Ga 0.80 N/GaN superlattices are presented. The modulation-doped sample is doped only in the AlGaN barriers. The shifted-modulation-doped sample has its dopants shifted by one-quarter period. Measurements reveal a strong improvement in mobility and resistivity for the modulation-doped and shifted-modulation-doped structures versus the uniformly doped structure. The modulation-doped sample has a mobility of 9.2 and 36 cm 2 /V s at 300 and 90 K respectively and a very low resistivity of 0.20 and 0.068 Ω cm at 300 and 90 K, respectively. Capacitance–voltage profiling shows multiple two-dimensional hole gases. The results are consistent with a reduction of neutral impurity scattering for modulation-doped structures as compared to uniformly doped structures.Keywords
This publication has 13 references indexed in Scilit:
- Polarization-enhanced Mg doping of AlGaN/GaN superlatticesApplied Physics Letters, 1999
- Built-in electric-field effects in wurtzite AlGaN/GaN quantum wellsJournal of Applied Physics, 1999
- Demonstration of efficient p-type doping in Al x Ga 1–x N/GaNsuperlattice structuresElectronics Letters, 1999
- Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlatticesApplied Physics Letters, 1999
- Aluminum gallium nitride short-period superlattices doped with magnesiumApplied Physics Letters, 1999
- Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wellsPhysical Review B, 1998
- Macroscopic polarization and band offsets at nitride heterojunctionsPhysical Review B, 1998
- Enhancement of deep acceptor activation in semiconductors by superlattice dopingApplied Physics Letters, 1996
- Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992