Single-growth embedded epitaxy AlGaAs injection lasers with extremely low threshold currents
- 1 December 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (11) , 987-989
- https://doi.org/10.1063/1.91743
Abstract
A new type of strip‐geometry AlGaAs double‐heterostructure laser with an embedded optical waveguide has been developed. The new structure is fabricated using a single step of epitaxial growth. Lasers with threshold currents as low as 9.5 mA (150 μm long) were obtained. These lasers exhibit operation in a single spatial and longitudinal mode, have differential quantum efficiencies exceeding 45%, and a characteristic temperature of 175° C. They emit more than 12 mW/facet of optical power without any kinks.Keywords
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