0.25- mu m pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technology
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (12) , 2701-2706
- https://doi.org/10.1109/16.168751
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Dry etch processing of GaAs/AlGaAs high electron mobility transistor structuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- CH4/H2 reactive ion etching for gate recessing of pseudomorphic modulation doped field effect transistorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- AlGaAs/GaAs based HEMTs, inverters, and ring oscillators with InGaAs, and AlGaAs etch-stop layersElectronics Letters, 1991
- Damage studies of dry etched GaAs recessed gates for field effect transistorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Selective reactive ion etching for short-gate-length GaAs/AlGaAs/InGaAs pseudomorphic modulation-doped field-effect transistorsJournal of Vacuum Science & Technology B, 1989
- Recent advances in ultrahigh-speed HEMT LSI technologyIEEE Transactions on Electron Devices, 1989
- Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devicesApplied Physics Letters, 1987