Fabrication of GaAs Quantum Wire Structures by Hydrogen-Assisted Molecular Beam Epitaxy
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12B) , L1834-1836
- https://doi.org/10.1143/jjap.32.l1834
Abstract
GaAs Quantum wire structures have been fabricated by hydrogen-assisted molecular beam epitaxy on substrates having V-shaped grooves, the side walls of which consist of (111)A. The growth rate of GaAs on (111)A was significantly decreased by atomic hydrogen irradiation, while that on (001) was increased. The large difference in the growth rate between (001) and (111)A has been uniquely utilized for the fabrication of quantum wires. The existence of a quantum energy level in the quantum wire structures has been confirmed by photoluminescence (PL) measurement. The PL spectra showed a clear polarization dependence.Keywords
This publication has 6 references indexed in Scilit:
- Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal-organic chemical-vapor depositionJournal of Applied Physics, 1992
- Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)-(111)B facet structures for edge quantum wiresApplied Physics Letters, 1991
- Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen IrradiationJapanese Journal of Applied Physics, 1991
- Formation of AlGaAs quantum wire-like structures on vicinal (110) GaAs substrates by molecular beam epitaxyAIP Conference Proceedings, 1991
- Single quantum wire semiconductor lasersApplied Physics Letters, 1989
- Low-temperature photoluminescence from InGaAs/InP quantum wires and boxesApplied Physics Letters, 1987