High mobility HfO2 n- and p-channel transistors

This publication has 2 references indexed in Scilit:

• Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide
  Advanced Materials for Optics and Electronics, 2000
• Predicting CMOS speed with gate oxide and voltage scaling and interconnect loading effects
  IEEE Transactions on Electron Devices, 1997