Operation of a single-ended 550 Mbit/s, 41 fJ, hybridCMOS/MQWreceiver-transmitter

11 April 1996

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 32 (8) , 764-766
https://doi.org/10.1049/el:19960539

Abstract

A single-ended, asynchronous, transimpedance receiver-transmitter circuit with 5 mW power dissipation, is implemented in 0.8 µm silicon CMOS. A hybrid flip-chip bonding technique is used to attach GaAs-AlGaAs MQW detectors and modulators to the circuit. Operation of the circuit at a sensitivity of –19.4 dBm (41 fJ) and a bit error rate -9 at 550 Mbit/s is demonstrated.

Keywords

This publication has 4 references indexed in Scilit:

1-Gb/s two-beam transimpedance smart-pixel optical receivers made from hybrid GaAs MQW modulators bonded to 0.8 μm silicon CMOS
IEEE Photonics Technology Letters, 1996
3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver-transmitter circuit
IEEE Photonics Technology Letters, 1995
Ring oscillators with optical and electrical readoutbased on hybridGaAs MQW modulators bonded to 0.8 µm silicon VLSI circuits
Electronics Letters, 1995
GaAs MQW modulators integrated with silicon CMOS
IEEE Photonics Technology Letters, 1995