Low-frequency noise as a tool for characterization of near-band impurities in silicon
- 30 April 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (4) , 447-452
- https://doi.org/10.1016/0038-1101(92)90104-k
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Shallow defects responsible for GR noise in MOSFETsIEEE Transactions on Electron Devices, 1991
- Operation of short-channel depletion-mode MOS devices at liquid-nitrogen temperatureIEEE Transactions on Electron Devices, 1991
- Impurity ionization in MOSFETs at very low temperaturesCryogenics, 1990
- Low frequency noise and DLTS as semiconductor device characterization toolsSolid-State Electronics, 1988