Surface breakdown effects in silicon pn junctions
- 30 April 1965
- journal article
- Published by Elsevier in Surface Science
- Vol. 3 (2) , 109-125
- https://doi.org/10.1016/0039-6028(65)90037-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962
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- Avalanche Breakdown Voltage in Hemispherical (p-n) JunctionsJournal of Electronics and Control, 1958
- Peripheral Inhomogeneties of the Alloyed Germanium p-n JunctionJournal of the Physics Society Japan, 1957
- Some Experiments on, and a Theory of, Surface BreakdownJournal of Applied Physics, 1956
- Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a SemiconductorJournal of Applied Physics, 1955
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955