Effective electronic masses in wurtzite and zinc-blende GaN and AlN
- 31 October 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 231 (3) , 397-406
- https://doi.org/10.1016/s0022-0248(01)01470-1
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- Dependence of energy gaps and effective masses on atomic positions in hexagonal SiCJournal of Applied Physics, 1999
- Electronic band structures and effective-mass parameters of wurtzite GaN and InNJournal of Applied Physics, 1998
- Effective masses and valence-band splittings in GaN and AlNPhysical Review B, 1997
- Valence band splittings and band offsets of AlN, GaN, and InNApplied Physics Letters, 1996
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995
- First-principles calculations of effective-mass parameters of AlN and GaNPhysical Review B, 1995
- Metal semiconductor field effect transistor based on single crystal GaNApplied Physics Letters, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964