MBE growth mechanism of ZnSe: Growth rate and surface coverage
- 1 July 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (3) , 513-518
- https://doi.org/10.1016/0022-0248(89)90046-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Incorporation processes in MBE growth of ZnSeJournal of Crystal Growth, 1989
- MBE growth mechanisms of ZnSe: Flux ratio and substrate temperatureJournal of Crystal Growth, 1989
- Reflection high-energy electron diffraction observations during growth of ZnSxSe1−x(0≤x≤1) by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- MBE growth mechanisms of ZnSe.Hyomen Kagaku, 1988
- Growth of undoped ZnSe on (100) GaAs by molecular-beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratioJournal of Applied Physics, 1987
- RHEED Observation on (001)ZnSe Surface: MBE Surface Phase Diagram and Kinetic Behavior of Zn And Se AdatomsJapanese Journal of Applied Physics, 1987