MBE growth mechanisms of ZnSe: Flux ratio and substrate temperature
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 529-532
- https://doi.org/10.1016/0022-0248(89)90459-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Materials growth and its impact on devices from wide band gap II–VI compoundsJournal of Crystal Growth, 1988
- MBE growth mechanisms of ZnSe.Hyomen Kagaku, 1988
- Intensity variations of reflection high-energy electron diffraction during atomic layer epitaxial growth and sublimation of Zn chalcogenidesJournal of Crystal Growth, 1987
- Molecular beam epitaxy of zinc chalcogenidesJournal of Crystal Growth, 1981
- Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977