Intensity variations of reflection high-energy electron diffraction during atomic layer epitaxial growth and sublimation of Zn chalcogenides
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 43-48
- https://doi.org/10.1016/0022-0248(87)90362-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs SubstratesJapanese Journal of Applied Physics, 1986
- Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxyApplied Physics Letters, 1986
- Observations on intensity oscillations in reflection high-energy electron diffraction during epitaxial growth of Si(001) and Ge(001)Applied Physics Letters, 1986
- Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAsApplied Physics Letters, 1986
- Intensity oscillations of reflection high-energy electron diffraction during silicon molecular beam epitaxial growthApplied Physics Letters, 1985