Molecular dynamics simulations of multilayer homoepitaxial thin film growth in the diffusion-limited regime
- 10 December 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 393 (1-3) , 72-84
- https://doi.org/10.1016/s0039-6028(97)00560-8
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Mechanistic study of atomic desorption resulting from the keV-ion bombardment of fcc{001} single-crystal metalsPhysical Review B, 1995
- Mechanism of the transition from fractal to dendritic growth of surface aggregatesNature, 1994
- Growth and coalescence in submonolayer homoepitaxy on Cu(100) studied with high-resolution low-energy electron diffractionPhysical Review Letters, 1994
- Construction and evaluation of embedding functionsSurface Science, 1994
- Scaling analysis of surface roughness and Bragg oscillation decay in models for low-temperature epitaxial growthSurface Science, 1992
- The structure of NiN and PdN clusters: 4≤N≤23The Journal of Chemical Physics, 1992
- A molecular dynamics analysis of low energy atom—surface interaction during energetic deposition of silver thin filmsSurface and Coatings Technology, 1992
- Molecular-dynamics simulation of the energetic deposition of Ag thin filmsPhysical Review B, 1991
- Corrected effective-medium study of metal-surface relaxationPhysical Review B, 1991
- Low-temperature epitaxial growth of thin metal filmsPhysical Review B, 1990