Deep level transient spectroscopy of defects introduced by resistive evaporation of metals on silicon
- 15 January 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (2) , 209-211
- https://doi.org/10.1063/1.94712
Abstract
Schottky barrier diodes were formed on n‐ and p‐type silicon by resistive evaporation of Ti and Au. The defects introduced in the substrate near the metal‐silicon interface were characterized by deep level transient spectroscopy. For n‐type devices defects were observed at 0.11, 0.14, and 0.17 eV below the conduction band, while for p‐type devices one defect at 0.33 eV above the valence band was measured. All these defects could be removed by annealing the devices at 175 °C for 10 min.Keywords
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