Optical properties of Ti1−x Hf x Se2 layered compounds from 1 to 9 eV
- 1 August 1984
- journal article
- Published by Springer Nature in Il Nuovo Cimento D
- Vol. 4 (2) , 141-152
- https://doi.org/10.1007/bf02451574
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Plasmon and interband transitions insystemsPhysical Review B, 1984
- Infrared optical properties of single crystals in the system Ti1−xHfxSe2Solid State Communications, 1984
- Thermo-optical response of VxTi1-xSe2 in the plasmon reionSolid State Communications, 1982
- Electrical resistivity and Hall effect in the mixed system Ti1-xHfxSe2Journal of Physics C: Solid State Physics, 1981
- The influence of impurities on the electrical properties of TiSe2single crystalsJournal of Physics C: Solid State Physics, 1980
- Infra-red studies of TiSe2: IR phonons and free carriersPhilosophical Magazine Part B, 1979
- Infrared study of superlattice formation in Ti1+xSe2Solid State Communications, 1978
- Band structure and lattice instability of TiPhysical Review B, 1978
- Electronic properties and superlattice formation in the semimetalPhysical Review B, 1976
- Preparation and optical properties of group IV–VI2 chalcogenides having the CdI2 structureJournal of Physics and Chemistry of Solids, 1965