Diffusion of implanted impurities in amorphous Si
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 480-483
- https://doi.org/10.1016/s0168-583x(87)80095-2
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance techniqueApplied Physics A, 1986
- Interdiffusion in Si/Ge amorphous multilayer filmsApplied Physics Letters, 1985
- Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantationJournal of Applied Physics, 1985
- Diffusion and precipitation in amorphous SiApplied Physics Letters, 1985
- Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser IrradiationPhysical Review Letters, 1984
- On the configurational entropy of amorphous Si and GePhilosophical Magazine, 1974
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964
- Mechanism of Gold Diffusion into SiliconJournal of Applied Physics, 1964
- Erratum: Solubility and Diffusivity of Gold, Iron, and Copper in SiliconJournal of Applied Physics, 1957