Stability of GaAs/AlAs superlattices
- 1 December 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 68 (10) , 959-962
- https://doi.org/10.1016/0038-1098(88)90141-x
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Full-potential linear-muffin-tin-orbital calculation of phonon frequencies in semiconductorsPhysical Review B, 1988
- Full-potential linear muffin-tin-orbital methodPhysical Review B, 1988
- Dipole effects and band offsets at semiconductor interfacesPhysical Review B, 1988
- Stability and electronic structure of ultrathin [001] (GaAs(AlAssuperlatticesPhysical Review B, 1988
- Comparison of dipole layers, band offsets, and formation enthalpies of GaAs-AlAs(110) and (001) interfacesPhysical Review Letters, 1987
- Bonding and ionicity in semiconductorsPhysical Review B, 1987
- Confined states and stability of GaAs–AlAs superlatticesJournal of Vacuum Science & Technology B, 1987
- Long-Range Order and Segregation in Semiconductor SuperlatticesPhysical Review Letters, 1987
- Thermodynamic instability of ultrathin semiconductor superlattices: The (001) (GaAs(AlAsstructurePhysical Review Letters, 1987
- Linear methods in band theoryPhysical Review B, 1975