Theoretical analysis of confined quantum state GaAs/AlGaAs solid-state photomultipliers
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 26 (2) , 285-295
- https://doi.org/10.1109/3.44960
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
- Generalized excess noise factor for avalanche photodiodes of arbitrary structureIEEE Transactions on Electron Devices, 1990
- Theoretical comparison of electron real-space transfer in classical and quantum two-dimensional heterostructure systemsJournal of Applied Physics, 1989
- Dependence of the GaAs/AlGaAs superlattice ionization rate on Al contentApplied Physics Letters, 1989
- Field and spatial geometry dependencies of the electron and hole ionization rates in GaAs/AlGaAs multiquantum well APD'sIEEE Transactions on Electron Devices, 1988
- Resonant tunneling of electrons of one or two degrees of freedomApplied Physics Letters, 1988
- Physics of the enhancement of impact ionization in multiquantum well structuresApplied Physics Letters, 1987
- Noise properties and time response of the staircase avalanche photodiodeIEEE Transactions on Electron Devices, 1985
- Electron and hole impact ionization coefficients in GaAs-AlxGa1−xAs superlatticesApplied Physics Letters, 1985
- Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratioApplied Physics Letters, 1982
- Impact ionisation in multilayered heterojunction structuresElectronics Letters, 1980