Donor passivation in n-AllnAs layers by fluorine
- 1 May 1996
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (5) , 685-690
- https://doi.org/10.1007/bf02666524
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Automated Hall profiling system for the characterisation of semiconductors at room and liquid nitrogen temperaturesJournal of Physics E: Scientific Instruments, 1988
- Donor neutralization in GaAs(Si) by atomic hydrogenApplied Physics Letters, 1985