Distinction between donor and acceptor character of surface states in the Si-SiO2 interface

15 February 1978

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 32 (4) , 249-251
https://doi.org/10.1063/1.90008

Abstract

The charge type of interface states is determined utilizing surface potential fluctuations. For thermally grown (111) ‐oriented n‐type silicon, it is shown that the surface states below the conduction band are only donor states. Within the conduction band, an upper limit of 5×10¹¹ possible donor states per cm² is found. Within and above the valence band, acceptor states are either absent or at most present at a lower level than donor states. An upper limit of 1.6×10¹¹ possible acceptor states per cm² is obtained in this energy region.

Keywords

VALENCE BAND

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