Co-integration of GaAlAs/GaAs HBTs and GaAs FETs with a simple, manufacturable process
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper describes a simple approach for the integration of GaAlAs/GaAs HBTs and MESFETs on the same wafer. Our approach is based on using a GaAs layer on top of the HBT emitter region as the FET channel, which is integrated with only a small extension of the standard HBT process. Transconductance reaches 400 mS/mm for 1 mu m gate length devices while f/sub t/ and f/sub max/ are as high as 11 and 13 GHz, respectively.Keywords
This publication has 2 references indexed in Scilit:
- A GaAs Bi-FET technology for large scale integrationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 36 GHz 1/8 frequency divider with GaAs BP-MESFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002